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| AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specifications). AOL1420L is a Green Product ordering option. AOL1420 and AOL1420L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7m (VGS = 10V) RDS(ON) < 5.5m (VGS = 4.5V) D D G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current G Avalanche Current C C Maximum 30 20 85 63 150 18 14 30 112 100 50 2.1 1.3 -55 to 175 Units V V TC=25C G TC=100C B TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C A A Symbol t 10s Steady-State Steady-State RJA RJC Typ 19.6 50 0.9 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1420 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 85 1.8 2.9 4.4 4.4 106 0.72 Min 30 1 5 100 3 3.7 5.5 5.5 1 85 3840 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Gate resistance Rg SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr Turn-Off DelayTime tD(off) tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3200 590 414 0.54 63 33 8.6 17.6 12 15.5 40 14 34 30 0.7 76 40 VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 41 A: The value of R qJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 125 100 ID (A) 75 50 3.5V 25 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 10V 4.0V ID(A) 60 VDS=5V 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 25C 125C 8 7 RDS(ON) (m) 6 VGS=4.5V 5 4 VGS=10V 3 2 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 1.6 ID=20A 1.4 VGS=10V 1.2 VGS=4.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 1.0E+01 125C 6 RDS(ON) (m) 125C IS (A) 1.0E+00 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04 4 ID=20A 25C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 5000 4000 Ciss 3000 2000 Coss 1000 Crss 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 1000 10s 100 Power (W) ID (Amps) 100s 10 RDS(ON) limited T J(Max)=175C T C=25C 1ms 10ms DC 1 1000 800 600 400 200 0 0.0001 0.001 T J(Max)=175C T C=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJC Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T C+PDM.ZJC.RJC RJA=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 T on Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current T A=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 120 tA = L ID BV - VDD Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 100 80 Power (W) 60 80 Current rating ID(A) 60 40 40 20 0 0.01 20 0 0 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) 25 50 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 0.1 0.01 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=60C/W 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.00001 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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